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Typical Performance Characteristics
I F =10m
V BO
: Break-Over Voltage
I BO
I B
V B =0.5*V BO
I BO
V
I B
: Break-Over Current
: Dynamic Breakover Voltage
: Leakage Current at V B =0.5*V BO
V F
V
V BO
V F
: Voltage at Current I F =10mA
Diagram 1 : Test circuit
Figure 1. Admissible Power Dissipation Curve
160
120
80
40
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature ( o C)
Figure 2. Relative Variation of VBO versus
Junction Temperature
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
Figure 3. Repetitive Peak Pulse Current versus
Pulse Duration (maximum values)
100
10
1
0.1
25
50
75
100
125
1
10
100
Tj(°C)
? 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
2
tp ( s)
www.fairchildsemi.com
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